Cambridge GaN Devices Pitch Deck (2016): 11-Slide Breakdown

Cambridge GaN Devices (CGD) presents a highly technical, credibility-first pitch deck that prioritizes founder expertise and intellectual property over traditional financial projections. With a team boasting over 150 patent applications and successful exits to companies like AMS and Power Integration, the deck establishes immediate authority. The core value proposition centers on 'HiGaN' intelligence—an on-chip solution that eliminates the need for the extra components typically required by standard Gallium Nitride (GaN) devices. While the deck excels at explaining the technical 'Why Now' and…

Key takeaways

• The team slide (Slide 2) is the deck's strongest asset, highlighting founders with 150+ patents and multiple successful exits in the semiconductor space.
• CGD identifies a specific technical pain point: standard GaN devices require complex extra components for safety and reliability, which CGD solves with on-chip integration (Slide 6).
• The company has a proven track record of securing non-dilutive funding, including a 12M USD European project where they served as lead partner (Slide 3).
• Market sizing is aggressive, citing a $45 billion TAM for the broader power semiconductor market and a $1 billion specific GaN market by 2026 (Slide 7).
• The IP portfolio is a central theme, growing from 'basic IP' in 2016 to 26 patent applications by 2021 (Slide 3).
• The deck utilizes a 'What if' framework to contrast CGD against both traditional Silicon and standard GaN, claiming the 'ease of use' of the former with the 'performance' of the latter (Slide 5).
• Strategic partnerships are validated through the GaNext project, involving 13 partners across 3 countries and $12.5 million in funding (Slide 9).
• There is no slide dedicated to the investment ask, valuation, or use of proceeds, which are standard for Series B decks.

Frequently asked questions

What is the primary technical advantage of CGD's technology?

According to Slide 6, CGD's 'HiGaN' intelligence is an on-chip integrated IC solution. Unlike competitors who require 'extra components' for safety, reliability, and specific gate driving, CGD's device is 'self-protected' and requires no additional external components. This reduces circuit complexity and prevents the efficiency compromises often caused by those extra parts.

How does the company validate its market readiness?

CGD uses a timeline (Slide 3) to show a progression from proof-of-concept in 2016 to '1st Design-In' and 'Eng samples' in 2020-2021. They also highlight their leadership in the GaNext project (Slide 9), a $12.5 million international cooperation involving industry giants like Infineon, which serves as a massive third-party validation of their technology's viability.

Who are the key people behind Cambridge GaN Devices?

The deck emphasizes a high-pedigree team from the University of Cambridge. CEO Dr. Giorgia Longobardi has 11 years of GaN experience and 12 patents. CTO Prof. Florin Udrea is a prolific inventor with 150+ patents and has founded three previous semiconductor companies (CamSemi, Cambridge CCS, and Camutronix) that were sold to major industry players (Slide 2).

What market segments is CGD targeting?

Slide 8 identifies four primary verticals: Consumer Electronics (power supplies), Industrial (LED drivers), Data Centres (power supplies), and Automotive (On-Board-Chargers for EVs). They specifically note that automotive and power supplies are the largest markets, with the potential to reduce EV charger sizes by 50%.

Is there any financial information or a funding ask in the deck?

No. The deck mentions past funding—specifically a 2.5M USD seed fund in 2019 and a 9.5M USD Series A in 2021 (Slide 3)—but it does not state the amount currently being raised, the valuation, or any revenue projections. This suggests the deck is designed for technical and strategic positioning rather than a cold-call financial pitch.

Cambridge GaN Devices pitch deck: the facts

Company

Cambridge GaN Devices

Year

2016

Stage

Series-B

Slides

11

Sector

Semiconductors / Power Electronics

Deck type

Technical / Strategic Pitch

Outcome

Raised Series A/B rounds (9.5M USD Series A noted on Slide 3)

Headquarters

Cambridge, UK

Cambridge GaN Devices pitch deck PDF

The full Cambridge GaN Devices deck is embedded on this page and can be read slide by slide in the browser — no download or account required. Each slide is covered in the breakdown above.

What the Cambridge GaN Devices pitch deck was used for

This deck is a Cambridge GaN Devices (CGD) fundraising presentation from around 2016, when the company had recently been spun out of the University of Cambridge’s Engineering Department power device group. It promotes CGD’s self-protected, easy‑to‑interface GaN power transistors and an integrated IC intelligence solution that eliminates the need for extra safety and driver components, targeting a roughly $45–50B power semiconductor market (as referenced in later company materials). The deck appears to be for an early venture round (classified by the source as “Series B” but more consistent with a pre‑seed/seed context) to industrialize the University research and begin commercialization of CGD’s GaN device family. It heavily emphasizes the Cambridge academic pedigree, unique IP and on‑chip protection as differentiators in consumer electronics, industrial, data center and automotive power markets, and highlights a team with prior experience at ARM and Infineon.

Business model: Fabless semiconductor company developing gallium nitride (GaN) power devices and transistors for high-efficiency power electronics applications.

Round

Series B (later‑stage VC)

Year

2022

Raised

£15.5m (approximately $19m) Series B funding.

Lead investor

Parkwalk Advisors and BGF co‑led the Series B round.

Investors

Parkwalk Advisors, BGF (Business Growth Fund), IQ Capital, Cambridge Innovation Capital (CIC), Foresight Williams Technology / Foresight Group, Martlet Capital

Founded

2016

Headquarters

Cambridge, United Kingdom (Jeffreys Building, Suite 8, Cowley Road, Cambridge CB4 0DS).

Industry

Semiconductors / Power Electronics (GaN power devices).

Total funding: Approximately $59–61M raised across multiple funding rounds up to Series C (2021–2025), depending on source methodology.

Use of funds as presented: To scale up CGD’s GaN transistor family into mass production for power applications and expand manufacturing operations and global supply capabilities for the power semiconductor device market.

What happened after the Cambridge GaN Devices deck

Since its 2016 spin‑out, Cambridge GaN Devices has progressed from early research commercialization (as reflected in this deck) to securing seed, Series A, Series B and Series C funding totaling around $59–61M, enabling it to move its GaN power transistor family into mass production and pursue global growth in the $50B+ power semiconductor device market.

• 2016: Cambridge GaN Devices spun out from the University of Cambridge’s Engineering Department power device group as a f
• 2019: Seed funding round reported, marking early commercial development after the spin‑out.
• 2021–2022: Series A (~$9.5–10M) and Series B (£15.5m / ~$19M) raised to expand the product portfolio and scale mass prod
• 2025: Series C funding round of $32M closed to drive global growth in the power semiconductor industry, backed by a mix

What the Cambridge GaN Devices deck got right

• Compelling technical differentiation via integrated protection and intelligence. The deck clearly distinguishes CGD’s GaN devices as **self‑protected chips** that are easy to interface and do not require extra components for safety, reliability or specific gate drivers, directly addressing integration pain points seen in competing GaN solutions.
• Strong efficiency and system‑simplification narrative. CGD emphasizes that extra components in competing designs compromise maximum efficiency, positioning its integrated IC intelligence solution as a way to preserve efficiency while simplifying system design.
• Clear articulation of value in specific high‑growth applications. The markets slide connects the technology to concrete benefits—reduced weight and volume, OPEX and CAPEX reductions of 10% or more, faster charging and more efficient operation—in EV on‑board chargers, DC‑DC converters and power supplies.
• Credible team with strong academic and industry pedigree. The team slide highlights experienced professionals from the power and fabless semiconductor business, with backgrounds at ARM and Infineon, and leverages the University of Cambridge brand and cutting‑edge research, reassuring investors about both technical depth and commercial experience.
• Early narrative aligned well with subsequent institutional funding success. Later funding announcements show that the early narrative around a large ($45–50B) power semiconductor market and GaN transistors for sustainability has resonated with institutional investors, culminating in significant Series B and Series C rounds—a sign that the core story in this deck was investable.
• Alignment with strong macro trends in electrification and efficiency. The deck positions CGD squarely within major secular trends—electrification of vehicles, growth of data centers and connected devices, and demand for green, efficient power solutions—making its GaN technology relevant to multiple long‑term tailwinds.

What could have been stronger

• Limited evidence of commercial traction. The deck (based on available OCR text) does not present any quantified traction, such as existing customers, design wins, pilot deployments or revenue, which makes it harder for investors to assess market validation beyond technical promise.
• Go‑to‑market and commercialization strategy not clearly detailed. Although the slides mention target markets like consumer electronics, data centers and EV on‑board chargers, there are no specific go‑to‑market plans, timelines, or unit economics visible in the extracted text, leaving uncertainty about how CGD will access these segments and scale sales.
• Technical claims are not backed by quantitative performance data in the deck excerpt. The technical comparison slide emphasizes that CGD’s GaN devices need no extra components for safety, reliability and gate driving, but does not provide supporting quantitative data, reliability metrics, or third‑party validation to substantiate these claims.
• IP strategy and protection lightly described. The deck leans heavily on the University of Cambridge brand and team pedigree, but offers little visible detail on the company’s IP position (patent count, key filings, or freedom‑to‑operate analysis) beyond generic references to a ‘unique proposition’ and ‘cutting‑edge research’.
• Market opportunity is broad but not analytically broken down. While the deck mentions a very large power semiconductor market ($45–50B), the OCR text does not show any segmentation, competitive landscape, or adoption roadmap, which could make the market story feel more aspirational than grounded.

How an investor would read this deck

What draws attention

• Clear articulation of a **self‑protected GaN device** and integrated IC intelligence that removes the need for extra safety and gate‑driver components, potentially simplifying system design and lowering BOM costs.
• Strong linkage to the **University of Cambridge power device group**, suggesting deep technical expertise and access to cutting‑edge research, which is later confirmed in company and funding announcements.
• Focus on large and growing end markets such as **EV on‑board chargers, DC‑DC converters, data centers, LED drivers and consumer electronics**, with explicit mentions of OPEX and CAPEX reduction and faster charging.
• Team slide highlighting experience in power and fabless semiconductor businesses and prior roles at **ARM and Infineon**, pointing to relevant industry know‑how.
• Consistency between the early narrative (spin‑out in 2016, GaN power devices for a $45–50B market) and later funding rounds led by established deep‑tech investors (Parkwalk Advisors, BGF, IQ Capital, CIC, Foresight Williams, Martlet), which reduces perceived execution risk.

Risks that stand out

• Technical risk that the integrated self‑protection and intelligence may add complexity or cost at the device level, potentially offsetting system‑level savings if not carefully optimized.
• Competitive risk from other GaN and advanced silicon carbide (SiC) vendors who may offer similar efficiency gains and integrated drivers, making differentiation based on protection and ease of interface harder to sustain over time.
• Execution risk around scaling from university spin‑out to high‑volume manufacturing in demanding markets like automotive EV and data centers, which require rigorous qualification and long design‑in cycles.
• Market‑timing risk: widespread adoption of GaN in some sectors (e.g., automotive OBC, industrial drives) can be slower than anticipated, extending the path to large revenue despite a sizable addressable market.
• Customer adoption risk if target OEMs remain cautious about replacing proven silicon solutions with newer GaN technologies without extended field data and strong guarantees on reliability and lifetime.

Questions this deck invites

• What specific reliability test data (e.g., lifetime, thermal performance, failure rates) supports the claim that CGD’s self‑protected GaN device can operate without additional safety or protection components, and how does this compare to in
• How many patents and patent families does CGD control around its integrated protection and gate‑drive architecture, and what freedom‑to‑operate analyses have been conducted versus major GaN competitors?
• What were the initial target applications and lead customers around the time of this early deck, and how did that focus evolve leading into the 2019 seed and 2021–2022 A/B rounds?
• What is CGD’s long‑term business model in each vertical (consumer electronics, data centers, automotive), including pricing strategy, gross margin expectations and whether the company sells discrete devices, modules, or reference designs?
• How dependent is CGD on specific foundry partners or supply‑chain nodes for its GaN processes, and what contingency plans exist to address capacity constraints or geopolitical risk in the power semiconductor supply chain?

What founders can take from the Cambridge GaN Devices deck

• Anchoring a deep‑tech pitch in a clear system‑level benefit—in this case, GaN devices that require **no extra safety or driver components**—helps translate complex device physics into a simple value proposition for investors and customers.
• Leveraging a strong academic origin, such as being **spun out of a leading university lab**, can effectively build credibility for a nascent semiconductor company, especially when later funding announcements reinforce that narrative.
• Explicitly linking device innovation to concrete market outcomes (smaller and lighter on‑board chargers, 10%+ OPEX and CAPEX reduction, faster charging) makes the market story more tangible than citing a large TAM alone.
• Showing that the team combines **industry experience (ARM, Infineon)** with academic research depth reassures investors that the company can bridge the gap from lab prototypes to commercial products.
• Even for early‑stage deep‑tech spin‑outs, aligning the deck’s narrative with future funding milestones—mass production, global growth, sustainability impact—can lay a coherent storyline that later rounds and press releases continue.
• Highlighting specific application segments like EV OBCs, data centers and LED drivers gives investors clearer mental models for where and how the technology will be adopted, instead of relying solely on generic ‘power electronics’ framing.

Cambridge GaN Devices pitch deck: common questions

What does Cambridge GaN Devices do?

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun out of the University of Cambridge’s Engineering Department power device group in 2016 to commercialize gallium nitride (GaN) power transistors and ICs for high‑efficiency power electronics.

How much did Cambridge GaN Devices raise in its Series B and who invested?

Later public information shows CGD raised £15.5m (about $19m) in a Series B round led by Parkwalk Advisors and BGF, with IQ Capital, Cambridge Innovation Capital (CIC), Foresight Williams Technology and Martlet Capital also participating. This capital was used to scale manufacturing and move its GaN transistor family into mass production for the power semiconductor market.

Which markets does Cambridge GaN Devices target with its technology?

CGD’s GaN devices target consumer electronics, industrial systems, LED drivers, data centers, and automotive electric vehicles including on‑board chargers (OBC) and DC‑DC converters, with claimed benefits such as smaller and lighter power supplies, 10%+ OPEX and CAPEX reductions, faster charging and more efficient operation.

What is the funding history of Cambridge GaN Devices after this early deck?

According to company and funding announcements, CGD has raised multiple rounds including seed (2019), Series A (around 2021, ~$9.5–10M), Series B (~$19M, 2022) and Series C ($32M, 2025), with total funding reported in the roughly $59–61M range depending on the data provider.

What is notable about Cambridge GaN Devices’ team and origins?

CGD was spun out of the University of Cambridge’s power device group and later funding releases emphasize a team of experienced professionals from industry and the fabless semiconductor business. The deck text explicitly references prior experience at ARM and Infineon and highlights the University of Cambridge brand and cutting‑edge research as part of its unique proposition.

Sources

Funding and outcome facts on this page were researched on 2026-08-21 from the pages below.

• Cambridge GaN Devices Secures $32M to Drive Growth in Power...
• Cambridge GaN Devices 2025 Company Profile: Valuation, Funding & Investors | PitchBook
• Cambridge GaN Devices: Funding, Team & Investors | Startup Intros
• Cambridge GaN Devices | Valuation, Funding Rounds & Stock Price
• Total Raised
• Cambridge GaN Devices Secures $19M to Scale Up For $50BN...
• Cambridge GaN Devices Receives $9.5 Million in Series A Funding - News
• Cambridge GaN Devices Ltd's Post - LinkedIn

Cambridge GaN Devices pitch deck slides

What each slide of the Cambridge GaN Devices pitch deck says

Slide 1

Cambridge Devices C D Shaping the Future ) of Power Electronics > By delivering the Most Efficient Easy-to-use transistor Co cess ape

Slide 2

CGD Founders and senior team: excellence from Cambridge University ( G ) Dr. Giorgia Longobardi Prof. Florin Udrea + 11 years experience in Galium Nitride Power devices. v - Prodasgor of Power semiconductor devices at Usiversity of + Product-ofientng research project manager CIEE (JE Bh, Sh Don). with top semiconductor companies: NXP (2010-2013) + Inventor of mone than 150 patent applications. Infineon (2014-2017), Vishay (2014-2017), + Constant for: Toyoea, Denso, NXP, Infineon, + Leader of the GaN Power devices team at the Vishay, On Semi. ABB. Engineering Depamment of Kighraiy. of Camendge + Founser of CAmSers (Si power (Cs) sold to + Inventor of 12 patent applicasons. Power Integration.…

Slide 4

Power devices at the heart C ») > 80% of the world's electricity passes through ...and is controlled a Power Electronics circuit... by Power Devices » - F— wn ¢ oy (— — ’ FL me | ga = 3 r ’

Slide 5

What if...CGD? CR CGD technology: The best of silicon with the performance of Gal pd co 4 + Relable gh oF Sate . - « Frondam of design wo . ‘ Hundreds of TWh per year saved Cantraige Fob wa camgandedces com 4

Slide 6

CGD device: a self-protected chip, easy to be interfaced CG) Examples from compelitlion Cambridge GaN Devices Additional devices needed to make GaN operating No extra components are needed Extra components for: = Satety * Reliability « Spaecific gate driver for correct functioning = Maximum efficiency compromisad by exira components HiGaN CGD on-chip integrated IC intell — solution remove needs gence for extra components www samgandedors com & Cambrage Febdi21

Slide 8

The markets we operate in C 9 Consumar alectronics: Industrial: LED drivers Data centres: Automative, electric vehicles: Power supplies and power supplies Power supplies On-Board-Chargers (OBC) - /il e Reduced wiight Violime reduction OPEX reduction by 10% or more Faster charging Mo efficient Mare efficlent CAPEX reguction up to 10% 50% smalier OBCs and DCDC convertess WHY NO/ A compact and Hi-tech horticulture for More and more connacted Towards a green workd green solution national supply chain. Huge demand for Elactrifications audio/video streaming of cars is happening and onling services

Slide 10

CGD gathered professionals from the industry C& Where innovation, unique proposition, market readiness and experience meet Expenenced team with track record In pawer and fabless. semiconducion business (5@ arm (nfineon @ & am Camberri Camteas Febdaan Unique propasition University of Camiteidge Brand Cutting-edge resgarch Foal of talents UNIVERSITY OF CAMBRIDGE wow camgardevioss com ¥

Slide text above is read directly from the Cambridge GaN Devices deck PDF embedded on this page.

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